sot-89 1. base 2. collector 3. emitter sot-89 plastic-encapsulate transistors transistor (pnp) features z power transistor z excellent dc current gain z low collector-emitter saturation voltage maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-50a,i e =0 -30 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e =-50a,i c =0 -6 v collector cut-off current i cbo v cb =-20v,i e =0 -0.5 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.5 a dc current gain h fe v ce =-2v, i c =-0.5a 82 390 collector-emitter saturation voltage v ce(sat) i c =-1.5a,i b =-0.15a -0.45 v collector output capacitance c ob v cb =-20v,i e =0, f=1mhz 60 pf transition frequency f t v ce =-6v,i c =-50ma, f=30mhz 120 mhz classification of h fe rank p q r range 82 C 180 120C 270 180 C 390 marking bfp bfq bfr symbol parameter value unit v cbo collector-base voltage -30 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -6 v i c collector current -3 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 2012- 0 willas electronic corp. z 2SB1308
-0 -1 -2 -3 -4 -5 -0 -100 -200 -300 -400 -500 -600 0 25 50 75 100 125 150 0 100 200 300 400 500 600 -10 -100 10 100 -1 -10 -100 -1000 -200 -400 -600 -800 -1000 -1200 -1 -10 -100 -1000 1000 -0.1 -1 -10 10 100 -1 -10 -100 -1000 -1 -10 -100 -1000 -0 -300 -600 -900 -1200 -1 -10 -100 -1000 common emitter t a =25 -1.5ma -1.35ma -1.2ma -1.05ma -0.9ma -0.75ma -0.6ma -0.45ma -0.3ma i b =-0.15ma collector current i c (ma) collector-emitter voltage v ce (v) static characteristic ambient temperature t a ( ) collector power dissipation p c (mw) p c t a 30 common emitter v ce = -6v t a =25 collector current i c (ma) transition frequency f t (mhz) 200 -7 300 100 -3000 f t =10 i c v besat t a =25 t a =100 base-emitter saturation voltage v besat (mv) collector current i c (ma) common emitter v ce =-2v -3000 i c i c t a =100 t a =25 collector current i c (ma) dc current gain h fe f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib capacitance c (pf) reverse voltage v (v) c ib c ob 500 -20 -3000 typical characteristics h fe =10 i c v cesat t a =100 t a =25 collector current i c (ma) collector-emitter saturation voltage v cesat (mv) common emitter v ce =-2v collector current i c (ma) t a = 2 5 t a = 1 0 0 base-emmiter voltage v be (mv) -3000 i c v be 2012- 0 willas electronic corp. sot-89 plastic-encapsulate transistors 2SB1308
outline drawing dimensions in inches and (millimeters) sot-89 rev.c .047(1.2) .031(0.8) .102(2.60) .091(2.30) .181(4.60) .173(4.39) .061ref (1.55)ref .023(0.58) .016(0.40) .060typ (1.50)typ .118typ (3.0)typ .197(0.52) .013(0.32) .017(0.44) .014(0.35) .063(1.60) .055(1.40) .154(3.91) .167(4.25) 2012- 0 willas electronic corp. sot-89 plastic-encapsulate transistors 2SB1308
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